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IRF820S, SiHF820S
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
FEATURES
? Halogen-free According to IEC 61249-2-21
V DS (V)
R DS(on) ( ? )
Q g (Max.) (nC)
Q gs (nC)
Q gd (nC)
Configuration
D 2 PAK (TO-263)
V GS = 10 V
500
24
3.3
13
Single
D
3.0
Definition
? Surface Mount
? Available in Tape and Reel
? Dynamic dV/dt Rating
? Repetitive Avalanche Rated
? Fast Switching
? Ease of Paralleling
? Simple Drive Requirements
? Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design,
cost-effectiveness.
low on-resistance and
G D
G
The D 2 PAK (TO-263) is a surface mount power package
capable of accommodating die size up to HEX-4. It provides
the highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
S
ORDERING INFORMATION
S
N-Channel MOSFET
D 2 PAK (TO-263) is suitable for high current applications
because of its low internal connection resistance and can
dissipate up to 2.0 W in a typical surface mount application.
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
D 2 PAK (TO-263)
SiHF820S-GE3
IRF820SPbF
SiHF820S-E3
D 2 PAK (TO-263)
SiHF820STRL-GE3 a
IRF820STRLPbF a
SiHF820STL-E3 a
D 2 PAK (TO-263)
SiHF820STRR-GE3 a
IRF820STRRPbF a
SiHF820STR-E3 a
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS (T C = 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
SYMBOL
V DS
V GS
LIMIT
500
± 20
UNIT
V
Continuous Drain Current
V GS at 10 V
T C = 25 °C
T C = 100 °C
I D
2.5
1.6
A
Pulsed Drain Current a
I DM
8.0
Linear Derating Factor
Linear Derating Factor (PCB Mount) e
0.40
0.025
W/°C
Single Pulse Avalanche Energy b
Avalanche Current a
Repetitive Avalanche Energy a
E AS
I AR
E AR
210
2.5
5.0
mJ
A
mJ
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount) e
Peak Diode Recovery dV/dt c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
T C = 25 °C
T A = 25 °C
for 10 s
P D
dV/dt
T J , T stg
50
3.1
3.5
- 55 to + 150
300 d
W
V/ns
°C
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V DD = 50 V, starting T J = 25 °C, L = 60 mH, R g = 25 ? , I AS = 2.5 A (see fig. 12).
c. I SD ? 2.5 A, dI/dt ? 50 A/μs, V DD ? V DS , T J ? 150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91060
S11-1049-Rev. C, 30-May-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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